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Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon

Bonna K. Newman, Meng-Ju Sher, Eric Mazur and Tonio Buonassisi

Appl. Phys. Lett., 98, 251905- (2011).  export citation

DOI: 10.1063/1.3599450

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Silicon doped with non-equilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K, and that the absorption deactivation correlates with chalcogen diffusivity. In this work, we show that sub-bandgap absorptance can be reactivated by annealing at temperatures between 1350 K and 1550 K followed by fast cooling (> 50 K/s). Our results suggest that the defects responsible for sub-bandgap absorptance are in equilibrium at high-temperatures in hyperdoped Si:chalcogen systems.

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posted: Jun 21, 2011

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