Broadband spectroscopic studies of semiconductors under intense femtosecond laser excitation

Abstract:

We have measured the dielectric function (1.5-3.5 eV) of GaAs following intense femtosecond laser excitation with 100-fs time resolution. The results reveal the electronic and structural changes induced by the excitation, providing direct information on the electron and lattice dynamics.
Last updated on 07/24/2019