Dielectric constant of GaAs During Subpicosecond Laser-Induced Phase Transition

Citation:

Y. Siegal, E. N. Glezer, and E. Mazur. 1994. “Dielectric constant of GaAs During Subpicosecond Laser-Induced Phase Transition.” Phys. Rev. B, 49, Pp. 16403–16406. Publisher's Version

Abstract:

We measured the time evolution of the real and imaginary parts of the dielectric constant of GaAs following femtosecond laser pulse excitation. The data show a collapse of the average optical gap, or average bonding anti-bonding energy level separation. The rate of collapse increases with pump fluence. The decrease in the gap indicates that the pump beam induces a structural transformation from a covalent, tetrahedrally-coordinated crystal to a phase with metallic cohesive properties.
Last updated on 07/24/2019