@article {Newman:652,
	title = {Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon},
	journal = {Appl. Phys. Lett.},
	volume = {98},
	year = {2011},
	pages = {251905{\textendash}},
	abstract = {Silicon doped with non-equilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K, and that the absorption deactivation correlates with chalcogen diffusivity. In this work, we show that sub-bandgap absorptance can be reactivated by annealing at temperatures between 1350 K and 1550 K followed by fast cooling (\&gt; 50 K/s). Our results suggest that the defects responsible for sub-bandgap absorptance are in equilibrium at high-temperatures in hyperdoped Si:chalcogen systems.},
	doi = {10.1063/1.3599450},
	url = {/files/mazur/files/rep_652.pdf},
	author = {B. K. Newman and M. Sher and Mazur, E. and T. Buonassisi}
}
