@article {Sher:709,
	title = {Intermediate Band Conduction in Femtosecond-Laser Hyperdoped Silicon},
	journal = {Appl. Phys. Lett.},
	volume = {105},
	year = {2014},
	pages = {032103-1{\textendash}032103-5},
	abstract = {We use femtosecond-laser hyperdoping to introduce non-equilibrium concentrations of sulfur into silicon and study the nature of the resulting intermediate band. With increasing dopant concentration, the sub-bandgap absorption increases. To better understand the dopant energetics, we perform temperature-dependent Hall and resistivity measurements. We analyze the carrier concentration and the energetics of the intermediate band using a two- band model. The temperature-dependence of the carrier concentration and resistivity suggests that the dopant concentration is below the insulator-to-metal transition and that the samples have a localized intermediate band at 70 meV below the conduction band edge.},
	doi = {10.1063/1.4890618},
	url = {/files/mazur/files/rep_709.pdf},
	author = {M. Sher and Mazur, E.}
}
