@conference {Siegal:10,
	title = {Laser-induced bandgap collapse in GaAs},
	year = {1994},
	publisher = {Ultrafast Phenomena in Semiconductors},
	organization = {Ultrafast Phenomena in Semiconductors},
	abstract = {We present recent time-resolved measurements of the linear dielectric constant of GaAs at 2.2 eV and 4.4 eV following femtosecond laser pulse excitation. In sharp contrast to predictions based on the widely-used Drude model, the data show an interband absorption peak coming into resonance first with the 4.4-eV probe photon energy and then with the 2.2-eV probe photon energy, indicating major changes in the band structure. The time scale for these changes ranges from within 100 fs to a few picoseconds, depending on the incident pump pulse fluence.},
	keywords = {CA, Los Angeles},
	doi = {10.1016/0378-4371(84)90163-8},
	url = {/files/mazur/files/rep_10.pdf},
	author = {Y. Siegal and E. N. Glezer and Huang, L. and Mazur, E.}
}
