@article {Smith:656,
	title = {The Effects of a Thin Film Dopant Precursor on the Structure and Properties of Femtosecond-laser Irradiated Silicon},
	journal = {Appl. Phys. A},
	volume = {105},
	year = {2011},
	pages = {795{\textendash}800},
	abstract = {Femtosecond (fs) laser irradiation of a silicon substrate coated with a thin film is a flexible approach to producing metastable alloys with unique properties, including near-unity sub-band gap absorptance extending into the infrared. However, dopant incorporation from a thin film during fs-laser irradiation is not well understood. We study the thin film femtosecond-laser doping process through optical and structural characterization of silicon fs-laser doped using a selenium thin film, and compare the resulting microstructure and dopant distribution to fs-laser doping with sulfur from a gaseous precursor. We show that a thin film dopant precursor significantly changes the laser-material interactions, modifying both the surface structuring and dopant incorporation processes and in turn affecting p-n diode behavior.},
	doi = {10.1007/s00339-011-6651-2},
	url = {/files/mazur/files/rep_656.pdf},
	author = {M. J. Smith and M. T. Winkler and M. Sher and Y. Lin and Mazur, E. and S. Grade{\v c}ak}
}
