%0 Conference Paper %D 2004 %T High sensitivity silicon-based VIS/NIR photodetectors %A J. E. Carey %A Mazur, E. %K CA %K San Francisco %X We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PIN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm. %I CLEO 2004 %G eng %U /files/mazur/files/rep_456.pdf