Microstructured silicon photodetector


Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell. 2006. “Microstructured silicon photodetector.” Appl. Phys. Lett., 89, Pp. 033506–033508. Publisher's Version


Photodetectors fabricated on microstructured silicon are reported. The photodetectors exhibited high photoresponse; at 3 V bias, the responsivities were 92 A/W at 850 nm and 119 A/W at 960 nm. At wavelengths longer than 1.1 m, the photodetectors still showed strong photoresponse. A generation- recombination gain mechanism has been proposed to explain the photoresponse of these photodiodes. From measurements of the noise current density, the calculated gain was approximately 1200 at 3 V bias.
Last updated on 07/24/2019