Microstructured silicon photodetector

Citation:

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell. 2006. “Microstructured silicon photodetector.” Appl. Phys. Lett., 89, Pp. 033506–033508. Publisher's Version

Abstract:

Photodetectors fabricated on microstructured silicon are reported. The photodetectors exhibited high photoresponse; at 3 V bias, the responsivities were 92 A/W at 850 nm and 119 A/W at 960 nm. At wavelengths longer than 1.1 m, the photodetectors still showed strong photoresponse. A generation- recombination gain mechanism has been proposed to explain the photoresponse of these photodiodes. From measurements of the noise current density, the calculated gain was approximately 1200 at 3 V bias.
Last updated on 07/24/2019