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Ultrafast dynamics and phase changes in crystalline and amorphous GaAs

Citation:

A. M.-T. Kim, J. Paul Callan, C. A. D. Roeser, and E. Mazur. 2002. “Ultrafast dynamics and phase changes in crystalline and amorphous GaAs.” Phys. Rev. B, 66, Pp. 245203–245203.

Abstract:

The femtosecond time-resolved response of the spectral dielectric function provides a great wealth of information on carrier and lattice dynamics in highly photo-excited semiconductors. We present measurements of the dielectric function of crystalline and amorphous GaAs over a broad spectral energy range (1.7–3.4 eV), with sub- 100 fs time resolution. A detailed analysis of the data reveals many new insights into the dynamics and phase changes in semiconductors at high excitation fluences up to and beyond the damage threshold.