## [#  Optical hyperdoping: black silicon 

 ](/research-areas/optical-hyperdoping-black-silicon)

We have developed a novel technique that creates highly doped and structured silicon. Focusing a train of femtosecond laser pulses on silicon wafers in the presence of heavy chalcogens (e.g. S, Se, or Te) dopes a thin layer of silicon at the surface to non-equilibrium levels. This optical hyperdoping process creates black silicon, a highly absorbing surface with extended spectral sensitivity. This material offers new opportunities for silicon-based optoelectronic devices. Black silicon is strongly light-absorbing. During hyperdoping, the polished surface of a silicon wafer is transformed from shiny gray to deep black. In addition to near-unity absorption in the visible, black silicon absorbs over 80 percent of below band-gap, infrared light for wavelengths as long as 2500 nm. This can be used to make photodiodes with remarkable responsivity in both the visible and infrared. It is also possible that this extended absorption range can improve the efficiency of silicon solar cells.