High sensitivity silicon-based VIS/NIR photodetectors
Publication information:
2004. “High Sensitivity Silicon-Based VIS NIR Photodetectors”
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We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PIN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.