Laser doping and texturing of silicon for advanced optoelectronic devices

Presentation Date: 

Monday, October 17, 2016


Frontiers in Optics (FiO)/Laser Science (LS) Conference (Rochester, NY)

Presentation Slides: 

Irradiating a semiconductor sample with intense laser pulses in the presence of dopants drastically changes the optical, material, and electronic properties of the sample. The resulting material has applications for photodetectors and, potentially, intermediate-band solar cells.