Presentation Date:
Saturday, October 1, 1988
Location:
Annual Meeting of the Electrochemical Society (Chicago, IL)
The use of a streak camera makes it possible to improve the study of the melting of silicon during picosecond laser annealing. Its time resolution of 1.8 ps enables us to confirm that the molten silicon is heated above the melting temperature. It also provides spatial information on the melting process.