Thursday, June 2, 2016
AFOSR Ultrashort Pulse Laser-Matter Interactions PI Review (Arlington, VA)
Ultrafast-laser hyperdoped semiconductors have begun to be utilized for optoelectronic applications, but there is a need to better understand their fundamental physical properties. In this presentation, we discuss recent work on the basic science of ultrafast-laser structuring, time-resolved melting, resolidification, and hyperdoping, and the optical and electronic properties hyperdoped silicon. These aspects of ultrafast-laser hyperdoped semiconductors are central to hyperdoped materials science and device design.