Ultrafast dynamics in highly excited semiconductors

Publication information:

2005. “Ultrafast Dynamics in Highly Excited Semiconductors”

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A pump-probe technique measuring the dielectric function is presented and applied in a series of experiments. An ultrafast semiconductor-to-metal phase transition is observed in highly excited GaAs. High amplitude coherent phonon dynamics in Te are resolved suggesting a THz-driven semiconductor-semimetal transition. Coherent control including both enhancement and cancellation of the lattice vibrations in Te is demonstrated revealing a departure from the low-excitation behavior of similar materials.