Ultrafast Phase Transition Dynamics in GeSb Films

Presentation Date: 

Thursday, October 26, 2000

Location: 

Optical Society of America Annual Meeting, Optical Society of America (Providence, RI, USA)

Presentation Slides: 

We measure the dielectric function of thin a-GeSb films over a broad energy range (1.5 - 3.5 eV) with a time resolution of 70 fs after the excitation with an ultrashort laser pulse. The results reveal an ultrafast transition to a new non-thermodynamic phase which is not c-GeSb as previously believed.