Laser melting of silicon: the first few picoseconds


M. Buijs, J. Kai Wang, P. N. Saeta, and E. Mazur. 1990. “Laser melting of silicon: the first few picoseconds.” In Nonlinear Optics and Ultrafast Phenomena, edited by R. R. Alfano and L. J. Rothberg, Pp. 61–64. Nova Publishing.


The use of a streak camera makes it possible to improve the study of the melting of silicon during picosecond laser annealing. Its time resolution of 1.8 ps enables us to confirm that the molten silicon is heated above the melting temperature. It also provides spatial information on the melting process.
Last updated on 08/02/2019