Citation:
J. E. Carey and E. Mazur. 2004. “High sensitivity silicon-based VIS/NIR photodetectors.” In . CLEO 2004. Publisher's Version
Abstract:
We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PIN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.See also: Optical hyperdoping: black silicon