Ultrafast dynamics in solids

Ultrafast dynamics in highly excited semiconductors, at Seminar in the Institute of Electronic Structure and Laser (IESL), Foundation for Reaserch and Technology - Hellas (FORTH) (Heraklion, Crete, Greece), Friday, January 7, 2005:
A pump-probe technique measuring the dielectric function is presented and applied in a series of experiments. An ultrafast semiconductor-to-metal phase transition is observed in highly excited GaAs. High amplitude coherent phonon dynamics in Te are resolved suggesting a THz-driven semiconductor-semimetal transition. Coherent control including both enhancement and cancellation of the lattice vibrations in Te is demonstrated revealing a departure from the low-excitation behavior of similar materials.
Femtosecond measurement of laser-induced phase transformation in GaAs:linear and nonlinear properties, at OSA Annual Meeting (Dallas, TX), Saturday, January 1, 1994
We measured the dielectric constant and second-harmonic generation in GaAs following femtosecond laser-pulse excitation. From these measurements, we extract the behavior of the second-order optical susceptibility, which monitors crystal symmetry, during a laser-induced phase transformation. This is the first time, to our knowledge, that the effect of large changes in the dielectric constant has been taken into account explicitly in determining the second-order susceptibility.
The behavior of solids under excitation with intense femtosecond laser pulses, at Advanced Study Institute on Advances in Energy Transfer, Centro Ettore Majorana (Erice, Italy), Saturday, June 26, 1999:
1. Electronic and optical properties of solids : interaction of matter with light, dielectric function, phonons, direct and indirect excitation processes, cohesion in solids, covalent and metallic bonding, band structure, interaction of light with matter:

2. Energy transfer and relaxation in solids: single and multiphoton excitation, avalance photoionization, carrier-carrier scattering, carrier-phonon scattering, radiative and nonradiative carrier recombination, carrier diffusion, time scales:

3. Optical probing techniques: Generation of femtosecond laser pulses, pump-probe...

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Ultrafast exciton dynamics in highly excited bulk ZnO, at Photonics West 2009 (San Jose, CA), Wednesday, January 28, 2009:
Large bandgap semiconductors like ZnO are currently of interest as light emitters in the blue-UV spectral range. Advances in these technologies rely on a fundamental understanding of carrier dynamics and excitonic effects at high excitation densities. Researchers have described highly photo-excited ZnO using the polariton model. However, at high excitation, one would expect screening effects to come into play, such that the polariton model would no longer hold. With high carrier densities induced by intense, ultrashort laser pulses, we are able to monitor exciton dynamics through our micro-... Read more about Ultrafast exciton dynamics in highly excited bulk ZnO
Laser melting of silicon: the first few picoseconds, at Annual Meeting of the Electrochemical Society (Chicago, IL), Saturday, October 1, 1988
The use of a streak camera makes it possible to improve the study of the melting of silicon during picosecond laser annealing. Its time resolution of 1.8 ps enables us to confirm that the molten silicon is heated above the melting temperature. It also provides spatial information on the melting process.
S. Kudryashov, M. Kandyla, C. A. D. Roeser, and E. Mazur. 2007. “Transient picometer atomic displacements in a-Te photoexcited by femtosecond laser pulses.” In . International conference on coherent and nonlinear optics, Proceedings of SPIE Vol. 6727. Publisher's VersionAbstract
Subpicosecond, picometer atomic displacements in α-Те photoexcited by single femtosecond laser pulses have been measured by means of time-resolved optical reflectometry revealing threshold- like coherent quantum emission of single softened fully symmetrical optical A1-phonons and demonstrating absolute detection capability of this technique in studies of coherent phonon dynamics in solids.
S. K. Sundaram and E. Mazur. 2002. “Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses.” Nature Materials, 1, Pp. 217–224. Publisher's VersionAbstract
Soon after it was discovered that intense laser pulses of nanosecond duration from a ruby laser could anneal the lattice of silicon, it was established that this so-called pulsed laser annealing is a thermal process. Although the radiation energy is transferred to the electrons, the electrons transfer their energy to the lattice on the timescale of the excitation. The electrons and the lattice remain in equilibrium and the laser simply heats the solid to the melting temperature within the duration of the laser pulse. For ultrashort laser pulses in the femtosecond regime, however, thermal processes (which take several picoseconds) and equilibrium thermodynamics cannot account for the experimental data. On excitation with femtosecond laser pulses, the electrons and the lattice are driven far out of equilibrium and disordering of the lattice can occur because the interatomic forces are modified due to the excitation of a large (10% or more) fraction of the valence electrons to the conduction band. This review focuses on the nature of the non-thermal transitions in semiconductors under femtosecond laser excitation.
M. Kandyla. 2006. “Ultrafast dynamics of the laser-induced solid-to-liquid phase transition in aluminum”. Publisher's VersionAbstract
This dissertation reports the ultrafast dynamics of aluminum during the solid-toliquid phase transition of melting after excitation by an intense femtosecond laser pulse. Photoexcitation with intense femtosecond laser pulses is known to create a novel melting mechanism called non-thermal melting. This mechanism has been observed repeatedly in semiconductors, but not yet in metals. We investigate the melting mechanism of aluminum by monitoring the reflectivity response following excitation by an intense laser pulse. We employ an optical pumpprobe technique designed to measure broadband reflectivity across the visible spectrum with femtosecond time resolution. A non-thermal melting mechanism was proposed for aluminum by optical experiments that demonstrated transition of the optical properties from solid to liquid values within 500 fs after phototexcitation. This result was later challenged by electron diffraction experiments, which showed that the lattice loses long range order within 3.5 ps during photoinduced melting. This time scale implies conventional thermal melting. We find that the broadband optical properties during the solid-to-liquid phase transition in aluminum agree with the results obtained by the electron diffraction experiments. The transition of the broadband reflectivity from solid to liquid values is complete within 1.5 2 ps in our experiments, which is compatible with thermal melting. We dont observe time scales on the order of 500 fs. All the experimental evidence in this dissertation lead to the conclusion that the laser-induced, solid-to-liquid phase transition in aluminum is a thermal process.

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