2001

Micromachining transparent materials using a femtosecond laser oscillator, at Photonics West (San Jose, CA), Tuesday, January 23, 2001:
The use of femtosecond laser pulses for high-precision micromachining of the surface and bulk of transparent materials has received much attention in recent years. Several groups have demonstrated the direct writing of waveguides and other photonic devices inside bulk glass using femtosecond lasers. Many of the capabilities demonstrated in these experiments offer solutions to problems the telecommunications industry is currently facing. A major obstacle, however, for industrial adoption of the techniques that have been developed is the cost and complexity of the amplified femtosecond laser... Read more about Micromachining transparent materials using a femtosecond laser oscillator
Photodisruption in biological samples using femtosecond laser pulses, at Photonic West Conference (San Jose, CA), Tuesday, January 23, 2001:
Tightly focused femtosecond laser pulses can be absorbed nonlinearly inside biological materials, vaporizing tissue in the focal volume. High intensity is achieved at the focus with relatively low energy, minimizing collateral damage and unwanted heat deposition. We focus 100-fs laser pulses using a high numerical aperture microscope objective in the bulk of the skin tissue, disrupting micrometer-sized regions up to 100 mm beneath the sample surface. When the laser beam is focused even deeper into the sample, we observe the formation of filaments in the skin bulk rather than spherical sub-... Read more about Photodisruption in biological samples using femtosecond laser pulses
GeSb thin films: read-write optical data storage on the subnanosecond time scale., at Ultrafast Electronics and Optoelectronics 2001, Optical Society of America (Lake Tahoe, NV), Thursday, January 11, 2001:
The transition from the low reflectivity amorphous to the highly reflective crystalline phase of a-GeSb films is studied with fs time resolution. The results reveal an ultrafast transition to a new non-thermodynamic phase which is not c-GeSb as previously believed.

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